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Graphene/ h ‐BN Heterostructures: Recent Advances in Controllable Preparation and Functional Applications
Author(s) -
Song Xiuju,
Sun Jingyu,
Qi Yue,
Gao Teng,
Zhang Yanfeng,
Liu Zhongfan
Publication year - 2016
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201600541
Subject(s) - graphene , heterojunction , materials science , nanotechnology , chemical vapor deposition , hexagonal boron nitride , nanoelectronics , boron nitride , optoelectronics
Vertical heterostructures based on two‐dimensional (2D) layered materials such as graphene and hexagonal boron nitride have emerged as a new paradigm of functional materials. Representing the thinnest and most commonplace 2D heterostructures, graphene/ h ‐BN, have recently attracted considerable attentions due to their remarkable morphological, electrical, and thermal properties. Herein, this research news highlights recent advances in the preparation of graphene/ h ‐BN heterostructures, especially via two representative routes involving the one‐batch chemical vapor deposition and co‐segregation growth methods. Furthermore, several promising applications of such heterostructures in energy‐efficient nanoelectronics, energy conversion as well as energy harvesting are also introduced. The existing challenges and future directions with respect to the controllable preparation and the related applications of such graphene/ h ‐BN heterostructures are finally proposed.

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