Atomic Layer Deposited Aluminum Oxide for Interface Passivation of Cu 2 ZnSn(S,Se) 4  Thin‐Film Solar Cells | Zendy

Lee Yun Seog | Zendy; Gershon Talia | Zendy; Todorov Teodor K. | Zendy; Wang Wei | Zendy; Winkler Mark T. | Zendy; Hopstaken Marinus | Zendy; Gunawan Oki | Zendy; Kim Jeehwan | Zendy

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Atomic Layer Deposited Aluminum Oxide for Interface Passivation of Cu 2 ZnSn(S,Se) 4 Thin‐Film Solar Cells

Author(s) -

Lee Yun Seog,

Gershon Talia,

Todorov Teodor K.,

Wang Wei,

Winkler Mark T.,

Hopstaken Marinus,

Gunawan Oki,

Kim Jeehwan

Publication year - 2016

Publication title -

advanced energy materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.08

H-Index - 220

eISSN - 1614-6840

pISSN - 1614-6832

DOI - 10.1002/aenm.201600198

Subject(s) - passivation , materials science , atomic layer deposition , thin film , layer (electronics) , photoluminescence , aluminum oxide , aluminium , solar cell , optoelectronics , nanometre , deposition (geology) , oxide , interface (matter) , characterization (materials science) , nanotechnology , metallurgy , composite material , paleontology , capillary number , sediment , capillary action , biology

Nanometer‐scale‐thick Al 2 O 3 thin films grown by atomic layer deposition are implemented as an effective interface‐passivation strategy for improving Cu 2 ZnSn(S,Se) 4 ‐based thin‐film solar cell device performance. Photoluminescence characterization indicates that the enhancement originates from improved interface quality of the solar cell devices.

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