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Atomic Layer Deposited Aluminum Oxide for Interface Passivation of Cu 2 ZnSn(S,Se) 4 Thin‐Film Solar Cells
Author(s) -
Lee Yun Seog,
Gershon Talia,
Todorov Teodor K.,
Wang Wei,
Winkler Mark T.,
Hopstaken Marinus,
Gunawan Oki,
Kim Jeehwan
Publication year - 2016
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201600198
Subject(s) - passivation , materials science , atomic layer deposition , thin film , layer (electronics) , photoluminescence , aluminum oxide , aluminium , solar cell , optoelectronics , nanometre , deposition (geology) , oxide , interface (matter) , characterization (materials science) , nanotechnology , metallurgy , composite material , paleontology , capillary number , sediment , capillary action , biology
Nanometer‐scale‐thick Al 2 O 3 thin films grown by atomic layer deposition are implemented as an effective interface‐passivation strategy for improving Cu 2 ZnSn(S,Se) 4 ‐based thin‐film solar cell device performance. Photoluminescence characterization indicates that the enhancement originates from improved interface quality of the solar cell devices.