Premium
Over 9% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1– x Cd x S Buffer Layer
Author(s) -
Sun Kaiwen,
Yan Chang,
Liu Fangyang,
Huang Jialiang,
Zhou Fangzhou,
Stride John A.,
Green Martin,
Hao Xiaojing
Publication year - 2016
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201600046
Subject(s) - kesterite , materials science , czts , conduction band , solar cell , optoelectronics , thin film solar cell , open circuit voltage , buffer (optical fiber) , layer (electronics) , voltage , nanotechnology , electrical engineering , physics , quantum mechanics , engineering , electron
A kesterite Cu 2 ZnSnS 4 thin film solar cell with efficiency of over 9% is obtained by utilizing Zn 1– x Cd x S film as a replacement to traditional CdS buffer layer. Zn 1– x Cd x S film can optimize the conduction band offset between Cu 2 ZnSnS 4 absorber and buffer, forming a minor positive conduction band alignment, thereby alleviating the recombination significantly and improving the open circuit voltage and fill factor efficiently.