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Band Gap Dependence on Cation Disorder in ZnSnN 2 Solar Absorber
Author(s) -
Veal Tim D.,
Feldberg Nathaniel,
Quackenbush Nicholas F.,
Linhart Wojciech M.,
Scanlon David O.,
Piper Louis F. J.,
Durbin Steven M.
Publication year - 2015
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201501462
Subject(s) - materials science , wurtzite crystal structure , band gap , density functional theory , semiconductor , orthorhombic crystal system , absorption (acoustics) , optoelectronics , absorption spectroscopy , condensed matter physics , chemical physics , computational chemistry , crystallography , optics , crystal structure , chemistry , physics , zinc , metallurgy , composite material
The band gap of earth‐abundant ZnSnN 2 can be tuned between 1 and 2 eV by varying the growth conditions and resulting cation disorder. The optical absorption edges and carrier densities fall between model curves for cation‐ordered orthorhombic and disordered wurtzite ZnSnN 2 . Hard X‐ray photoemission spectra suggest different degrees of cation disorder from comparison with hybrid DFT‐calculated densities of states.
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