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Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe 1‐ x S x by Iodine Doping
Author(s) -
Zhang Qian,
Chere Eyob Kebede,
Sun Jingying,
Cao Feng,
Dahal Keshab,
Chen Shuo,
Chen Gang,
Ren Zhifeng
Publication year - 2015
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201500360
Subject(s) - materials science , hot pressing , thermoelectric effect , crystallite , thermoelectric materials , seebeck coefficient , thermal conductivity , doping , analytical chemistry (journal) , electrical resistivity and conductivity , chalcogenide , metallurgy , composite material , optoelectronics , thermodynamics , chemistry , physics , chromatography , electrical engineering , engineering
Iodine‐doped n‐type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n‐type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10 17 cm −3 (p‐type) to 5.0 × 10 15 cm −3 (n‐type) then to 2.0 × 10 17 cm −3 (n‐type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p‐type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ≈1.0 at about 773 K measured also along the hot pressing direction.