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Optoelectronic Devices: Low‐Temperature Combustion‐Synthesized Nickel Oxide Thin Films as Hole‐Transport Interlayers for Solution‐Processed Optoelectronic Devices (Adv. Energy Mater. 6/2014)
Author(s) -
Bai Sai,
Cao Motao,
Jin Yizheng,
Dai Xinliang,
Liang Xiaoyong,
Ye Zhizhen,
Li Min,
Cheng Jipeng,
Xiao Xuezhang,
Wu Zhongwei,
Xia Zhouhui,
Sun Baoquan,
Wang Ergang,
Mo Yueqi,
Gao Feng,
Zhang Fengling
Publication year - 2014
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201470030
Subject(s) - materials science , optoelectronics , work function , thin film , nickel oxide , nickel , optical transparency , oxide , combustion , aqueous solution , nanotechnology , metallurgy , layer (electronics) , organic chemistry , chemistry
A solution‐combustion strategy based on aqueous precursors is developed to fabricate nickel oxide (NiO x ) thin films with excellent optical transparency, flat surface features, and a high work function. As reported by Yizheng Jin, Baoquan Sun, Feng Gao, and co‐workers in article number 1301460, these are promising candidates for hole‐transporting and electron‐blocking interlayers in solution‐processed optoelectronic devices.