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Overcoming Efficiency Limitations of SnS‐Based Solar Cells
Author(s) -
Sinsermsuksakul Prasert,
Sun Leizhi,
Lee Sang Woon,
Park Helen Hejin,
Kim Sang Bok,
Yang Chuanxi,
Gordon Roy G.
Publication year - 2014
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201400496
Subject(s) - materials science , grain boundary , annealing (glass) , tin , solar cell , conduction band , doping , recombination , zinc , optoelectronics , electron , chemical engineering , metallurgy , microstructure , chemistry , biochemistry , physics , quantum mechanics , gene , engineering
Thin‐film solar cells are made by vapor deposition of Earth‐abundant materials: tin, zinc, oxygen and sulfur. These solar cells had previously achieved an efficiency of about 2%, less than 1/10 of their theoretical potential. Loss mechanisms are systematically investigated and mitigated in solar cells based on p‐type tin monosulfide, SnS, absorber layers combined with n‐type zinc oxysulfide, Zn(O,S) layers that selectively transmit electrons, but block holes. Recombination at grain boundaries is reduced by annealing the SnS films in H 2 S to form larger grains with fewer grain boundaries. Recombination near the p‐SnS/n‐Zn(O,S) junction is reduced by inserting a few monolayers of SnO 2 between these layers. Recombination at the junction is also reduced by adjusting the conduction band offset by tuning the composition of the Zn(O,S), and by reducing its free electron concentration with nitrogen doping. The resulting cells have an efficiency over 4.4%, which is more than twice as large as the highest efficiency obtained previously by solar cells using SnS absorber layers.