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Optimization of the Output Efficiency of GaN Nanowire Piezoelectric Nanogenerators by Tuning the Free Carrier Concentration
Author(s) -
Wang ChaoHung,
Liao WeiShun,
Lin ZongHong,
Ku NaiJen,
Li YiChang,
Chen YenChih,
Wang ZhongLin,
Liu ChuanPu
Publication year - 2014
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201400392
Subject(s) - piezoelectricity , materials science , doping , nanowire , dopant , optoelectronics , nanotechnology , noise (video) , free carrier , semiconductor , power (physics) , computer science , composite material , physics , image (mathematics) , quantum mechanics , artificial intelligence
Carrier concentration in a piezoelectric semiconductor greatly affects alternating current (AC) piezoelectric nanogenerators (NGs) because of the carrier screening effect on the piezoelectric potential. The output performance of a series of NGs is investigated by tuning the Si dopant concentration in GaN nanowires. The results show a strong carrier screening effect that degrades output performance for high doping concentrations but results in high output power for low doping concentrations.