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Improved Cu 2 O‐Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p‐n Junction
Author(s) -
Lee Sang Woon,
Lee Yun Seog,
Heo Jaeyeong,
Siah Sin Cheng,
Chua Danny,
Brandt Riley E.,
Kim Sang Bok,
Mailoa Jonathan P.,
Buonassisi Tonio,
Gordon Roy G.
Publication year - 2014
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201301916
Subject(s) - atomic layer deposition , materials science , open circuit voltage , solar cell , layer (electronics) , heterojunction , amorphous solid , energy conversion efficiency , deposition (geology) , atomic layer epitaxy , oxide , optoelectronics , chemical engineering , inorganic chemistry , nanotechnology , voltage , metallurgy , crystallography , electrical engineering , chemistry , engineering , sediment , biology , paleontology
Solar cells are produced by atomic layer deposition (ALD) of n‐type amorphous zinc‐tin‐oxide buffer layers on electrochemically deposited p‐type cuprous oxide, Cu 2 O, absorber layers. The diethylzinc precursor in the ALD process reduces Cu 2+ ‐related defects at the heterojunction interface, improving the solar‐cell open‐circuit voltage. An NREL‐certified power conversion efficiency of 2.85% is reported.