Improved Cu 2 O‐Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p‐n Junction | Zendy

Lee Sang Woon | Zendy; Lee Yun Seog | Zendy; Heo Jaeyeong | Zendy; Siah Sin Cheng | Zendy; Chua Danny | Zendy; Brandt Riley E. | Zendy; Kim Sang Bok | Zendy; Mailoa Jonathan P. | Zendy; Buonassisi Tonio | Zendy; Gordon Roy G. | Zendy

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Improved Cu 2 O‐Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p‐n Junction

Author(s) -

Lee Sang Woon,

Lee Yun Seog,

Heo Jaeyeong,

Siah Sin Cheng,

Chua Danny,

Brandt Riley E.,

Kim Sang Bok,

Mailoa Jonathan P.,

Buonassisi Tonio,

Gordon Roy G.

Publication year - 2014

Publication title -

advanced energy materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.08

H-Index - 220

eISSN - 1614-6840

pISSN - 1614-6832

DOI - 10.1002/aenm.201301916

Subject(s) - atomic layer deposition , materials science , open circuit voltage , solar cell , layer (electronics) , heterojunction , amorphous solid , energy conversion efficiency , deposition (geology) , atomic layer epitaxy , oxide , optoelectronics , chemical engineering , inorganic chemistry , nanotechnology , voltage , metallurgy , crystallography , electrical engineering , chemistry , engineering , sediment , biology , paleontology

Solar cells are produced by atomic layer deposition (ALD) of n‐type amorphous zinc‐tin‐oxide buffer layers on electrochemically deposited p‐type cuprous oxide, Cu 2 O, absorber layers. The diethylzinc precursor in the ALD process reduces Cu 2+ ‐related defects at the heterojunction interface, improving the solar‐cell open‐circuit voltage. An NREL‐certified power conversion efficiency of 2.85% is reported.

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