n‐Si–Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p–n Homojunction in n‐Si | Zendy

Erickson Ann S. | Zendy; Zohar Arava | Zendy; Cahen David | Zendy

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n‐Si–Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p–n Homojunction in n‐Si

Author(s) -

Erickson Ann S.,

Zohar Arava,

Cahen David

Publication year - 2014

Publication title -

advanced energy materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.08

H-Index - 220

eISSN - 1614-6840

pISSN - 1614-6832

DOI - 10.1002/aenm.201301724

Subject(s) - homojunction , materials science , inversion (geology) , layer (electronics) , deposition (geology) , atomic layer deposition , optoelectronics , nanotechnology , analytical chemistry (journal) , heterojunction , environmental chemistry , paleontology , structural basin , sediment , biology , chemistry

The built‐in voltage of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)–nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p–n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field‐effect transistor.

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