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n‐Si–Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p–n Homojunction in n‐Si
Author(s) -
Erickson Ann S.,
Zohar Arava,
Cahen David
Publication year - 2014
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201301724
Subject(s) - homojunction , materials science , inversion (geology) , layer (electronics) , deposition (geology) , atomic layer deposition , optoelectronics , nanotechnology , analytical chemistry (journal) , heterojunction , environmental chemistry , paleontology , structural basin , sediment , biology , chemistry
The built‐in voltage of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)–nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p–n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field‐effect transistor.