Premium
Low‐Temperature Combustion‐Synthesized Nickel Oxide Thin Films as Hole‐Transport Interlayers for Solution‐Processed Optoelectronic Devices
Author(s) -
Bai Sai,
Cao Motao,
Jin Yizheng,
Dai Xinliang,
Liang Xiaoyong,
Ye Zhizhen,
Li Min,
Cheng Jipeng,
Xiao Xuezhang,
Wu Zhongwei,
Xia Zhouhui,
Sun Baoquan,
Wang Ergang,
Mo Yueqi,
Gao Feng,
Zhang Fengling
Publication year - 2014
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201301460
Subject(s) - materials science , thin film , nickel oxide , oled , optoelectronics , nickel , combustion , diode , oxide , optical transparency , polymer , chemical engineering , nanotechnology , composite material , metallurgy , layer (electronics) , organic chemistry , chemistry , engineering
A method to deposit NiO x thin films by employing combustion reactions is reported and a low processing temperature of 175 °C is demonstrated. The resulting NiO x films exhibit high work functions, excellent optical transparency, and flat surface features. The NiO x thin films are employed as hole‐transport interlayers in organic solar cells and polymer light‐emitting diodes, exhibiting superior electrical properties.