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Relation of Nanostructure and Recombination Dynamics in a Low‐Temperature Solution‐Processed CuInS 2 Nanocrystalline Solar Cell
Author(s) -
Azimi Hamed,
Heumüller Thomas,
Gerl Andreas,
Matt Gebhard,
Kubis Peter,
Distaso Monica,
Ahmad Rameez,
Akdas Tugce,
Richter Moses,
Peukert Wolfgang,
Brabec Christoph J.
Publication year - 2013
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201300449
Subject(s) - materials science , nanocrystalline material , solar cell , charge carrier , nanostructure , crystallite , recombination , chemical physics , nanocrystal , energy conversion efficiency , diffusion , metastability , optoelectronics , carrier lifetime , nanotechnology , silicon , chemistry , thermodynamics , biochemistry , physics , organic chemistry , metallurgy , gene
The understanding and control of nanostructures with regard to transport and recombination mechanisms is of key importance in the optimization of the power conversion efficiency (PCE) of solar cells based on inorganic nanocrystals. Here, the transport properties of solution‐processed solar cells are investigated using photo‐CELIV (photogenerated charge carrier extraction by linearly increasing voltage) and transient photovoltage techniques; the solar cells are prepared by an in‐situ formation of CuInS 2 nanocrystals (CIS NCs) at the low temperature of 270 °C. Structural and morphological analyses reveal the presence of a metastable CuIn 5 S 8 phase and a disordered morphology in the CuInS 2 nanocrytalline films consisting of polycrystalline grains at the nanoscale range. Consistent with the disordered morphology of the CIS NC thin films, the CIS NC devices are characterized by a low carrier mobility. The carrier density dynamic indicates that the recombination kinetics in these devices follows the dispersive bimolecular recombination model and does not fully behave in a diffusion‐controlled manner, as expected by Langevin‐type recombination. The mobility–lifetime product of the charge carriers properly explains the performance of the thin (200 nm) CIS NC solar cell with a high fill‐factor of 64% and a PCE of over 3.5%.