Ultrahigh Mobility of p‐Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices | Zendy

Li FangZe | Zendy; Luo LinBao | Zendy; Yang QingDan | Zendy; Wu Di | Zendy; Xie Chao | Zendy; Nie Biao | Zendy; Jie JianSheng | Zendy; Wu ChunYan | Zendy; Wang Li | Zendy; Yu ShuHong | Zendy

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Ultrahigh Mobility of p‐Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices

Author(s) -

Li FangZe,

Luo LinBao,

Yang QingDan,

Wu Di,

Xie Chao,

Nie Biao,

Jie JianSheng,

Wu ChunYan,

Wang Li,

Yu ShuHong

Publication year - 2013

Publication title -

advanced energy materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.08

H-Index - 220

eISSN - 1614-6840

pISSN - 1614-6832

DOI - 10.1002/aenm.201200868

Subject(s) - materials science , nanowire , doping , photovoltaic system , optoelectronics , energy conversion efficiency , electron mobility , voltage , charge (physics) , layer (electronics) , nanotechnology , electrical engineering , physics , quantum mechanics , engineering

Unique p‐type CdS nanowires with ultrahigh mobility for photovoltaic devices: p‐type CdS nanowires can be prepared by surface charge transfer doping with a thin MoO 3 layer, which shows excellent rectifying characteristics with a high on/off current ratio of ∼1.6 × 10 2 and a low forward turn‐on voltage of about 1.0 V at room temperature, and obvious photovoltaic behavior with a power conversion efficiency ( η ) up to 1.65%.

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