Premium
Ultrahigh Mobility of p‐Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices
Author(s) -
Li FangZe,
Luo LinBao,
Yang QingDan,
Wu Di,
Xie Chao,
Nie Biao,
Jie JianSheng,
Wu ChunYan,
Wang Li,
Yu ShuHong
Publication year - 2013
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201200868
Subject(s) - materials science , nanowire , doping , photovoltaic system , optoelectronics , energy conversion efficiency , electron mobility , voltage , charge (physics) , layer (electronics) , nanotechnology , electrical engineering , physics , quantum mechanics , engineering
Unique p‐type CdS nanowires with ultrahigh mobility for photovoltaic devices: p‐type CdS nanowires can be prepared by surface charge transfer doping with a thin MoO 3 layer, which shows excellent rectifying characteristics with a high on/off current ratio of ∼1.6 × 10 2 and a low forward turn‐on voltage of about 1.0 V at room temperature, and obvious photovoltaic behavior with a power conversion efficiency ( η ) up to 1.65%.