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Increase in the Figure of Merit by Cd‐Substitution in Sn 1–x Pb x Te and Effect of Pb/Sn Ratio on Thermoelectric Properties
Author(s) -
Han MiKyung,
Zhou Xiaoyuen,
Uher Ctirad,
Kim SungJin,
Kanatzidis Mercouri G.
Publication year - 2012
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201200083
Subject(s) - materials science , figure of merit , thermoelectric effect , doping , thermal conductivity , analytical chemistry (journal) , seebeck coefficient , electrical resistivity and conductivity , thermoelectric materials , thermodynamics , physics , composite material , chemistry , optoelectronics , chromatography , quantum mechanics
The effects of Cd‐doping on the thermoelectric properties of Sn 1–x Pb x Te are investigated and compared to the properties of the corresponding Sn 1–x Pb x Te solid solutions. The addition of Cd results in a reduction in the carrier concentration and changes in the physical properties, as well as in the conduction type of Sn 1–x Pb x Te. A significant increase in the power factor accompanied by a reduction in the thermal conductivity result in a higher figure of merit (ZT) for (Sn 1–x Pb x ) 0.97 Cd 0.03 Te than that of undoped Sn 1–x Pb x Te. The maximum ZT (∼0.7) values are observed for p‐type material with x = 0.36 at 560 K. Much higher values (ZT ∼ 1.2 at 560 K for x = 0.73) are obtained on n‐type samples.