Increase in the Figure of Merit by Cd‐Substitution in Sn 1–x Pb x Te and Effect of Pb/Sn Ratio on Thermoelectric Properties | Zendy

Han MiKyung | Zendy; Zhou Xiaoyuen | Zendy; Uher Ctirad | Zendy; Kim SungJin | Zendy; Kanatzidis Mercouri G. | Zendy

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Increase in the Figure of Merit by Cd‐Substitution in Sn 1–x Pb x Te and Effect of Pb/Sn Ratio on Thermoelectric Properties

Author(s) -

Han MiKyung,

Zhou Xiaoyuen,

Uher Ctirad,

Kim SungJin,

Kanatzidis Mercouri G.

Publication year - 2012

Publication title -

advanced energy materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.08

H-Index - 220

eISSN - 1614-6840

pISSN - 1614-6832

DOI - 10.1002/aenm.201200083

Subject(s) - materials science , figure of merit , thermoelectric effect , doping , thermal conductivity , analytical chemistry (journal) , seebeck coefficient , electrical resistivity and conductivity , thermoelectric materials , thermodynamics , physics , composite material , chemistry , optoelectronics , chromatography , quantum mechanics

The effects of Cd‐doping on the thermoelectric properties of Sn 1–x Pb x Te are investigated and compared to the properties of the corresponding Sn 1–x Pb x Te solid solutions. The addition of Cd results in a reduction in the carrier concentration and changes in the physical properties, as well as in the conduction type of Sn 1–x Pb x Te. A significant increase in the power factor accompanied by a reduction in the thermal conductivity result in a higher figure of merit (ZT) for (Sn 1–x Pb x ) 0.97 Cd 0.03 Te than that of undoped Sn 1–x Pb x Te. The maximum ZT (∼0.7) values are observed for p‐type material with x = 0.36 at 560 K. Much higher values (ZT ∼ 1.2 at 560 K for x = 0.73) are obtained on n‐type samples.

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