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Tellurium‐Free Thermoelectric: The Anisotropic n ‐Type Semiconductor Bi 2 S 3
Author(s) -
Biswas Kanishka,
Zhao LiDong,
Kanatzidis Mercouri G.
Publication year - 2012
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201100775
Subject(s) - materials science , thermoelectric effect , tellurium , anisotropy , doping , figure of merit , semiconductor , condensed matter physics , thermoelectric materials , electrical resistivity and conductivity , type (biology) , optoelectronics , thermal conductivity , optics , thermodynamics , metallurgy , composite material , physics , quantum mechanics , ecology , biology
Well‐oriented crystals of n ‐type bulk Bi 2 S 3 and Bi 2 S 3‐x Se x doped with BiCl 3 show excellent anisotropic thermoelectric properties. BiCl 3 doping in Bi 2 S 3 leads to significant increase in the electrical conductivity, which results to a promising thermoelectric figure of merit, ZT , of ≈0.6 at 760 K.