Tellurium‐Free Thermoelectric: The Anisotropic  n ‐Type Semiconductor Bi 2 S 3 | Zendy

Biswas Kanishka | Zendy; Zhao LiDong | Zendy; Kanatzidis Mercouri G. | Zendy

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Tellurium‐Free Thermoelectric: The Anisotropic n ‐Type Semiconductor Bi 2 S 3

Author(s) -

Biswas Kanishka,

Zhao LiDong,

Kanatzidis Mercouri G.

Publication year - 2012

Publication title -

advanced energy materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.08

H-Index - 220

eISSN - 1614-6840

pISSN - 1614-6832

DOI - 10.1002/aenm.201100775

Subject(s) - materials science , thermoelectric effect , tellurium , anisotropy , doping , figure of merit , semiconductor , condensed matter physics , thermoelectric materials , electrical resistivity and conductivity , type (biology) , optoelectronics , thermal conductivity , optics , thermodynamics , metallurgy , composite material , physics , quantum mechanics , ecology , biology

Well‐oriented crystals of n ‐type bulk Bi 2 S 3 and Bi 2 S 3‐x Se x doped with BiCl 3 show excellent anisotropic thermoelectric properties. BiCl 3 doping in Bi 2 S 3 leads to significant increase in the electrical conductivity, which results to a promising thermoelectric figure of merit, ZT , of ≈0.6 at 760 K.

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