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ZnS Nanodot Film as Defect Passivation Layer for Cu(In,Ga)(S,Se) 2 Thin‐Film Solar Cells Deposited by Spray‐ILGAR (Ion‐Layer Gas Reaction)
Author(s) -
Fu Yanpeng,
Allsop Nicholas A.,
Gledhill Sophie E.,
Köhler Tristan,
Krüger Martin,
SáezAraoz Rodrigo,
Blöck Ulrike,
LuxSteiner Martha Ch.,
Fischer ChristianHerbert
Publication year - 2011
Publication title -
advanced energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.08
H-Index - 220
eISSN - 1614-6840
pISSN - 1614-6832
DOI - 10.1002/aenm.201100146
Subject(s) - nanodot , passivation , materials science , layer (electronics) , wurtzite crystal structure , chemical engineering , ion , buffer (optical fiber) , nanotechnology , analytical chemistry (journal) , zinc , metallurgy , chromatography , engineering , telecommunications , chemistry , physics , quantum mechanics , computer science
Wurtzite‐phase ZnS nanodot films with controllable dot density can be prepared at low temperature by a technique known as Spray‐ILGAR (ILGAR = ion‐layer gas reaction), without organic surfactant. ZnS nanodots covered with homogenous In 2 S 3 (as the point‐contact bridge) act as a defect passivation layer and form a structured buffer layer. This ZnS/In 2 S 3 buffer improves cell efficiencies by up to about 1%–1.5% compared to reference cells with a pure ILGAR In 2 S 3 buffer.