ZnS Nanodot Film as Defect Passivation Layer for Cu(In,Ga)(S,Se) 2  Thin‐Film Solar Cells Deposited by Spray‐ILGAR (Ion‐Layer Gas Reaction) | Zendy

Fu Yanpeng | Zendy; Allsop Nicholas A. | Zendy; Gledhill Sophie E. | Zendy; Köhler Tristan | Zendy; Krüger Martin | Zendy; SáezAraoz Rodrigo | Zendy; Blöck Ulrike | Zendy; LuxSteiner Martha Ch. | Zendy; Fischer ChristianHerbert | Zendy

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ZnS Nanodot Film as Defect Passivation Layer for Cu(In,Ga)(S,Se) 2 Thin‐Film Solar Cells Deposited by Spray‐ILGAR (Ion‐Layer Gas Reaction)

Author(s) -

Fu Yanpeng,

Allsop Nicholas A.,

Gledhill Sophie E.,

Köhler Tristan,

Krüger Martin,

SáezAraoz Rodrigo,

Blöck Ulrike,

LuxSteiner Martha Ch.,

Fischer ChristianHerbert

Publication year - 2011

Publication title -

advanced energy materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.08

H-Index - 220

eISSN - 1614-6840

pISSN - 1614-6832

DOI - 10.1002/aenm.201100146

Subject(s) - nanodot , passivation , materials science , layer (electronics) , wurtzite crystal structure , chemical engineering , ion , buffer (optical fiber) , nanotechnology , analytical chemistry (journal) , zinc , metallurgy , chromatography , engineering , telecommunications , chemistry , physics , quantum mechanics , computer science

Wurtzite‐phase ZnS nanodot films with controllable dot density can be prepared at low temperature by a technique known as Spray‐ILGAR (ILGAR = ion‐layer gas reaction), without organic surfactant. ZnS nanodots covered with homogenous In 2 S 3 (as the point‐contact bridge) act as a defect passivation layer and form a structured buffer layer. This ZnS/In 2 S 3 buffer improves cell efficiencies by up to about 1%–1.5% compared to reference cells with a pure ILGAR In 2 S 3 buffer.

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