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Resistive Switching Effects of Crystal‐Ion‐Slicing Fabricated LiNbO 3 Single Crystalline Thin Film on Flexible Polyimide Substrate (Adv. Electron. Mater. 9/2021)
Author(s) -
Huang Shitian,
Luo Wenbo,
Pan Xinqiang,
Zhao Jinyan,
Qiao Shijun,
Shuai Yao,
Zhang Kaisheng,
Bai Xiaoyuan,
Niu Gang,
Wu Chuangui,
Zhang Wanli
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202170036
Subject(s) - materials science , slicing , polyimide , neuromorphic engineering , substrate (aquarium) , memristor , optoelectronics , flexible electronics , thin film , nanotechnology , resistive random access memory , electronic engineering , electrical engineering , computer science , voltage , layer (electronics) , oceanography , machine learning , geology , world wide web , artificial neural network , engineering
High‐performance Flexible Memristor In article number 2100301 by Wenbo Luo, Xinqiang Pan, and co‐workers, high‐performance flexible memristor on polyimide substrate based on single crystalline LiNbO3 thin film using Crystal‐ion‐slicing technology is demonstrated. This flexible memristor which could be integrated with other flexible electronic devices and flexible circuits can become a promising candidate for memory and neuromorphic computing.