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Elucidating Ionic Programming Dynamics of Metal‐Oxide Electrochemical Memory for Neuromorphic Computing (Adv. Electron. Mater. 8/2021)
Author(s) -
Jeong Yangho,
Lee Hyunjoon,
Ryu Da Gil,
Cho Seong Ho,
Lee Gawon,
Kim Sangbum,
Kim Seyoung,
Lee Yun Seog
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202170034
Subject(s) - neuromorphic engineering , materials science , ionic bonding , oxide , electrochemistry , computer science , nanotechnology , resistive random access memory , conductance , computational science , artificial neural network , electrode , ion , electrical engineering , artificial intelligence , chemistry , voltage , physics , engineering , organic chemistry , condensed matter physics , metallurgy
Electrochemical Memory Devices In article number 2100185, Seyoung Kim, Yun Seog Lee, and coworkers reveal the ionic programming mechanism in metal‐oxide based electrochemical memory devices with ionic migration and diffusion model. Exploiting the operating mechanism, this memory device can achieve highly linear and symmetric conductance response as well as a programming selectivity. The highly linear and selectorless programming promotes the advent of large‐scale arrays for neuromorphic computing.