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Giant Piezoelectricity of Deformed Aluminum Nitride Stabilized through Noble Gas Interstitials for Energy Efficient Resonators (Adv. Electron. Mater. 8/2021)
Author(s) -
Fiedler Holger,
Fuchs Florian,
Leveneur Jérôme,
Nancarrow Mitchell,
Mitchell David R. G.,
Schuster Jörg,
Kennedy John
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202170032
Subject(s) - materials science , wurtzite crystal structure , piezoelectricity , nitride , resonator , aluminium , noble gas , optoelectronics , nanotechnology , composite material , metallurgy , atomic physics , layer (electronics) , physics , zinc
Ion Beam Implantation Aluminium nitride (AlN) is central to a range of RF filter and resonators at the heart of 5G technologies. Under suitable conditions, as shown by Holger Fiedler, John Kennedy and co‐workers in article number 2100358, the piezoelectric modulus of epitaxial AlN increases by ion beam implantation of noble gases. This effect originates from a finite volume of deformed AlN with giant piezoelectricity; stabilized by incorporated noble gases into wurtzite interstitial sites.