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Graphene Diodes: Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics (Adv. Electron. Mater. 7/2021)
Author(s) -
Wang Zhenxing,
Hemmetter Andreas,
Uzlu Burkay,
Saeed Mohamed,
Hamed Ahmed,
Kataria Satender,
Negra Renato,
Neumaier Daniel,
Lemme Max C.
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202170025
Subject(s) - graphene , photodetection , materials science , optoelectronics , diode , schottky diode , heterojunction , electronics , schottky barrier , nanotechnology , photodetector , electrical engineering , engineering
In article 2001210, Max C. Lemme and co‐workers highlight recent advances in 2D/3D heterostructures with graphene. The article demonstrates the advantages of metal‐insulator‐graphene diodes and graphene‐silicon Schottky diodes for radio frequency circuit applications and photodetection, with outstanding figures‐of‐merit comparable to or even outperforming the state‐of‐the‐art technology.