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Optoelectronic RAM: Multifunctional Optoelectronic Random Access Memory Device Based on Surface‐Plasma‐Treated Inorganic Halide Perovskite (Adv. Electron. Mater. 7/2021)
Author(s) -
Liu Qi,
Yue Wenjing,
Li Yang,
Wang Wenxiao,
Xu Lei,
Wang Yaqi,
Gao Song,
Zhang Chunwei,
Kan Hao,
Li Chao
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202170023
Subject(s) - resistive random access memory , materials science , optoelectronics , scalability , perovskite (structure) , power consumption , flash memory , flash (photography) , power (physics) , computer science , electrical engineering , computer hardware , optics , voltage , physics , quantum mechanics , chemical engineering , engineering , database
In article number 2100366, Yang Li and co‐workers present an optoelectronic random access memory (RRAM) device for solving scalability and power consumption issues existing in traditional flash‐based storage devices. In addition to excellent resistive switching behaviors, the optoelectronic RRAM device shows superior ultraviolet light‐enhanced storage and in‐computing abilities. This research provides an effective way for developing high‐density storage and in‐computing devices.