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Ferroelectric‐nanocrack Device: Ferroelectric‐Nanocrack Switches for Memory and Complementary Logic with Zero Off‐current and Low Operating Voltage (Adv. Electron. Mater. 6/2021)
Author(s) -
Guo Zhe,
Guan Yaodong,
Luo Qiang,
Hong Jeongmin,
You Long
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202170021
Subject(s) - ferroelectricity , materials science , optoelectronics , voltage , ferroelectric capacitor , non volatile memory , zero (linguistics) , electron , electrical engineering , nanotechnology , dielectric , engineering , physics , quantum mechanics , linguistics , philosophy
An emerging ferroelectric‐nanocrack device with excellent electrical performance, even at scaled dimensions, is demonstrated in article 2100023 by Long You and co‐workers. Such device can condense the memory and logic functions into a single device level, offering a new energy‐efficient hardware platform for logic‐in‐memory applications.