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Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021)
Author(s) -
Shih YuChuan,
Lee Ling,
Liang KaiDe,
Manikandan Arumugam,
Liu WenWu,
Chen YuZe,
Chang MuTung,
Wang Zhiming M.,
Chueh YuLun
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202170015
Subject(s) - materials science , nanowire , resistive random access memory , optoelectronics , voltage , non volatile memory , resistive touchscreen , electrode , nanotechnology , in situ , single crystal , electrical engineering , crystallography , physics , meteorology , engineering , chemistry
A resistive switching memory fabricated by using an in situ current‐induced oxidization process on a single crystal metallic nanowire is demonstrated by Yu‐Lun Chueh and co‐workers in article number 2000252. A single‐crystal Cu nanowire (NW) is found to be the best material with stable switching behaviors including reversible switching up to 100 cycles with large ON/OFF ratio of >10 3 and low switching voltages of <0.5.