Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021) | Zendy

Shih YuChuan | Zendy; Lee Ling | Zendy; Liang KaiDe | Zendy; Manikandan Arumugam | Zendy; Liu WenWu | Zendy; Chen YuZe | Zendy; Chang MuTung | Zendy; Wang Zhiming M. | Zendy; Chueh YuLun | Zendy

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Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021)

Author(s) -

Shih YuChuan,

Lee Ling,

Liang KaiDe,

Manikandan Arumugam,

Liu WenWu,

Chen YuZe,

Chang MuTung,

Wang Zhiming M.,

Chueh YuLun

Publication year - 2021

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.202170015

Subject(s) - materials science , nanowire , resistive random access memory , optoelectronics , voltage , non volatile memory , resistive touchscreen , electrode , nanotechnology , in situ , single crystal , electrical engineering , crystallography , physics , meteorology , engineering , chemistry

A resistive switching memory fabricated by using an in situ current‐induced oxidization process on a single crystal metallic nanowire is demonstrated by Yu‐Lun Chueh and co‐workers in article number 2000252. A single‐crystal Cu nanowire (NW) is found to be the best material with stable switching behaviors including reversible switching up to 100 cycles with large ON/OFF ratio of >10 3 and low switching voltages of <0.5.

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