Premium
Bandgap Modulation in BP Field Effect Transistor and Its Applications
Author(s) -
Zhang Fanqing,
Yu Jinran,
Sun Jia,
Sun Qijun,
Wang Zhong Lin
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202100228
Subject(s) - materials science , band gap , heterojunction , optoelectronics , graphene , electron mobility , engineering physics , field effect transistor , transistor , black phosphorus , phosphorene , nanotechnology , modulation (music) , doping , electrical engineering , physics , engineering , voltage , acoustics
Black phosphorus (BP), an emerging crystal material with prominent features such as high carrier mobility and easily modulated band structure, fills the deficiencies of graphene and transition metal dichalcogenides. It has become a key component of 2D materials. The biggest advantage of BP is reflected in the fixed and direct energy band structure. Starting from the introduction of BP's crystal structure, this work reviews the important role of doping strategies, van der Waals heterojunction, and contact engineering thickness control technology in bandgap adjustment and performance improvement of BP field effect transistors. The focus is to put on the enhanced performance of electronic devices in high mobility, fast response speed, wide spectral range, low power consumption, and stronger stability caused by bandgap modulation. These methods cover from advanced technology to a wide range of electrical and optoelectronic progress in recent years, showing a booming development trend. In addition, considering the breakthrough of BP in new physics and application prospects, the potential applications of the active field are highlighted in this work.