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2D Transistors: Vertical Integration of 2D Building Blocks for All‐2D Electronics (Adv. Electron. Mater. 12/2020)
Author(s) -
Tang Jian,
Wang Qinqin,
Wei Zheng,
Shen Cheng,
Lu Xiaobo,
Wang Shuopei,
Zhao Yanchong,
Liu Jieying,
Li Na,
Chu Yanbang,
Tian Jinpeng,
Wu Fanfan,
Yang Wei,
He Congli,
Yang Rong,
Shi Dongxia,
Watanabe Kenji,
Taniguchi Takashi,
Zhang Guangyu
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202070048
Subject(s) - materials science , transistor , electronics , nanotechnology , optoelectronics , flexible electronics , electrical engineering , engineering , voltage
In article number 2000550, Guangyu Zhang and co‐workers realized vertically integrated multilayer all‐2D transistors based on gate‐all‐around structure and multilayer functional devices with excellent and comprehensive device performance. These devices demonstrate great potential for use in the next generation of sensing–processing–computing nanosystems and advanced electronic applications.