Premium
Neuromorphic Computing: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching (Adv. Electron. Mater. 11/2020)
Author(s) -
Petzold Stefan,
Piros Eszter,
Eilhardt Robert,
Zintler Alexander,
Vogel Tobias,
Kaiser Nico,
Radetinac Aldin,
Komissinskiy Philipp,
Jalaguier Eric,
Nolot Emmanuel,
CharpinNicolle Christelle,
Wenger Christian,
MolinaLuna Leopoldo,
Miranda Enrique,
Alff Lambert
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202070044
Subject(s) - neuromorphic engineering , materials science , yttrium , resistive random access memory , quantization (signal processing) , oxide , electronic materials , nanotechnology , electrical engineering , optoelectronics , electronic engineering , computer science , artificial neural network , artificial intelligence , engineering , voltage , metallurgy , computer vision
For neuromorphic computing that mimics the human brain, digital memory has to turn analogue. A key scientific question is how to teach materials to adopt synaptic plasticity. In article 2000439, Stefan Petzold, Eszter Piros, and co‐workers use the novel technique of oxygen engineering on yttrium oxide and show that this particular material is a prominent candidate to allow for controlling and fine‐tuning switching dynamics.