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Metal‐Oxide Transistors: Coating Thickness Controls Crystallinity and Enables Homoepitaxial Growth of Ultra‐Thin‐Channel Blade‐Coated In 2 O 3 Transistors (Adv. Electron. Mater. 11/2020)
Author(s) -
Kirmani Ahmad R.,
Chen Huilang,
Stafford Christopher M.,
Bittle Emily G.,
Richter Lee J.
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202070043
Subject(s) - materials science , crystallinity , optoelectronics , thin film transistor , oxide , transistor , thin film , coating , metal , epitaxy , nanotechnology , layer (electronics) , composite material , electrical engineering , metallurgy , engineering , voltage
Lee Richter and co‐workers explore the role of channel thickness in controlling crystallinity and charge transport in metal‐oxide transistors with ultra‐thin channels fabricated using blade‐coating at low temperatures in article number 2000354. Highly oriented oxide crystals below a critical thickness enable channel deposition via solution‐epitaxy resulting in band‐like transport with electron mobilities of ca. 40 cm 2 V −1 s −1 . These findings are attractive for electronic applications that require ultra‐thin channels with high mobilities, such as flexible large‐area displays and biosensors.