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Silent Synapse: Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO 2 Nanowire‐Based Memristor (Adv. Electron. Mater. 9/2020)
Author(s) -
Shan Xuanyu,
Wang Zhongqiang,
Lin Ya,
Zeng Tao,
Zhao Xiaoning,
Xu Haiyang,
Liu Yichun
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202070039
Subject(s) - synapse , memristor , nanowire , materials science , optoelectronics , nanotechnology , synaptic plasticity , neuromorphic engineering , neuroscience , electrical engineering , computer science , chemistry , artificial neural network , biology , artificial intelligence , biochemistry , receptor , engineering
In article number 2000536 by Zhongqiang Wang, Haiyang Xu, Yichun Liu, and co‐workers, activation of silent synapse to functional synapse is demonstrated by plasma‐treatment in TiO2‐nanowire based memristor. The pristine device acts as the silent synapse without synaptic plasticity and the plasmatreated device mimicked functional synapse, which is beneficial for expanding the plasticity of artificial synapse.