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2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al 2 O 3 /SrTiO 3 Interface (Adv. Electron. Mater. 6/2020)
Author(s) -
Moon Taehwan,
Lee Hyun Jae,
Hyun Seung Dam,
Kim Baek Su,
Kim Ho Hyun,
Hwang Cheol Seong
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202070028
Subject(s) - materials science , transistor , fermi gas , threshold voltage , oxide , optoelectronics , conductance , channel (broadcasting) , electronics , voltage , electron , nanotechnology , electrical engineering , condensed matter physics , physics , engineering , quantum mechanics , metallurgy
A transistor with a two‐dimensional electron gas (2DEG) channel at the hetero‐oxide structure is proposed by Cheol Seong Hwang and co‐workers in article number 1901286. The negative voltage stress on the gate induces the migration of oxygen vacancies through the gate oxide, resulting in a feasible 2DEG conductance for transistor operation. This will contribute to understanding the principles of 2D electronic devices.