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Artificial Synapses: Near‐Infrared‐Irradiation‐Mediated Synaptic Behavior from Tunable Charge‐Trapping Dynamics (Adv. Electron. Mater. 2/2020)
Author(s) -
Wang Yan,
Yang Jing,
Ye Wenbin,
She Donghong,
Chen Jinrui,
Lv Ziyu,
Roy Vellaisamy A. L.,
Li Huilin,
Zhou Kui,
Yang Qing,
Zhou Ye,
Han SuTing
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202070007
Subject(s) - materials science , optoelectronics , trapping , synaptic plasticity , transistor , irradiation , nanotechnology , physics , chemistry , voltage , biology , ecology , quantum mechanics , nuclear physics , biochemistry , receptor
In article number 1900765, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han, and co‐workers demonstrate a photonic synaptic transistor based on a tunable charge‐trapping medium. The device senses and responds to near‐infrared light signals, and can mimic memorization and dynamic forgetting processes, enabling device‐level synaptic evolution from short‐term to long‐term neuroplasticity.

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