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Monolayer Doping: A Shallow Acceptor of Phosphorous Doped in MoSe 2 Monolayer (Adv. Electron. Mater. 1/2020)
Author(s) -
Xia Yipu,
Zhang Junqiu,
Yu Zhoubin,
Jin Yuanjun,
Tian Hao,
Feng Yue,
Li Bin,
Ho Wingkin,
Liu Chang,
Xu Hu,
Jin Chuanhong,
Xie Maohai
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202070005
Subject(s) - monolayer , materials science , doping , dopant , molecular beam epitaxy , acceptor , fermi level , electron , condensed matter physics , nanotechnology , epitaxy , optoelectronics , layer (electronics) , physics , quantum mechanics
Phosphorous doping in a MoSe 2 monolayer is achieved by co‐deposition of P, Se, and Mo during molecular‐beam epitaxy, as reported by Maohai Xie and co‐workers in article number 1900830. P atoms substitute Se in MoSe 2 , acting as acceptors and causing a Fermi‐level shift. The doping level can be tuned by changing the P/Se flux ratio. For dopants of the group‐V elements, the binding energy becomes shallower with increasing atomic mass.