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Artifical Synapses: Synaptic Plasticity and Filtering Emulated in Metal–Organic Frameworks Nanosheets Based Transistors (Adv. Electron. Mater. 1/2020)
Author(s) -
Ding Guanglong,
Yang Baidong,
Zhou Kui,
Zhang Chen,
Wang Yaxin,
Yang JiaQin,
Han SuTing,
Zhai Yongbiao,
Roy Vellaisamy A. L.,
Zhou Ye
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202070004
Subject(s) - ambipolar diffusion , materials science , transistor , realization (probability) , transmission (telecommunications) , optoelectronics , synaptic plasticity , nanotechnology , electron , computer science , electrical engineering , telecommunications , chemistry , engineering , physics , voltage , biochemistry , statistics , mathematics , receptor , quantum mechanics
In article number 1900978, Su‐Ting Han, Vellaisamy A. L. Roy, Ye Zhou, and co‐workers demonstrate a three‐terminal synaptic transistor based on MOF materials. This device exhibits ambipolar charge‐trapping performance and can simulate biological synaptic behaviors, enabling the realization of learning functions and signal transmission simultaneously.