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One‐Selector One‐Resistor Devices: Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer (Adv. Electron. Mater. 1/2020)
Author(s) -
Chen Ao,
Ma Guokun,
Zhang Ziqi,
Lin ChihYang,
Lin ChunChu,
Chang TingChang,
Tao Li,
Wang Hao
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202070002
Subject(s) - materials science , resistor , niobium , layer (electronics) , optoelectronics , oxide , niobium oxide , nanotechnology , electrical engineering , engineering , voltage , metallurgy
Multi‐functional controllable devices exhibit excellent one‐selector one‐resistor (1S1R) and threshold switching properties, which are valuable for the development of integration. In article number 1900756, Guokun Ma, Li Tao, Hao Wang, and co‐workers discuss this multi‐function and use finite element analysis to solidly understand the mechanism behind it. This work will allow for better understanding of the degeneration of 1S1R properties and represents a step towards 3D storage technology.