Premium
Spintronics: Large‐Spin‐Gap Nodal‐Line Half‐Metal and High‐Temperature Ferromagnetic Semiconductor in Cr 2 X 3 (X=O,S,Se) Monolayers (Adv. Electron. Mater. 1/2020)
Author(s) -
Chen JianYong,
Li XingXing,
Zhou WenZhe,
Yang JinLong,
Ouyang FangPing,
Xiong Xiang
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202070001
Subject(s) - spintronics , condensed matter physics , materials science , ferromagnetism , curie temperature , monolayer , semiconductor , half metal , magnetocrystalline anisotropy , spin (aerodynamics) , magnetic anisotropy , nanotechnology , magnetization , magnetic field , optoelectronics , physics , quantum mechanics , thermodynamics
In article number 1900490, Fang‐Ping Ouyang, Xiang Xiong, and co‐workers propose a family of stable 2D honeycomb Kagome Cr 2 X 3 (X=O,S,Se) monolayers through first‐principles calculations. Planar Cr 2 S 3 and Cr 2 Se 3 are ferromagnetic half‐metals with mirror symmetry protected nodal lines for spin‐down channels, while buckled Cr 2 O 3 layers are ferromagnetic semiconductors with large out‐of‐plane magnetocrystalline anisotropy energy (MAE), and predicted Curie temperatures of 332 K under moderate biaxial tensile strain. These properties make such materials suitable for novel spintronic devices and exotic quantum applications.