Premium
Phase Change Random Access Memory for Neuro‐Inspired Computing
Author(s) -
Wang Qiang,
Niu Gang,
Ren Wei,
Wang Ruobing,
Chen Xiaogang,
Li Xi,
Ye ZuoGuang,
Xie YaHong,
Song Sannian,
Song Zhitang
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202001241
Subject(s) - memristor , computer science , realization (probability) , maturity (psychological) , phase change , random access memory , neuromorphic engineering , phase change memory , mainstream , reservoir computing , big data , artificial intelligence , data science , artificial neural network , engineering , electrical engineering , engineering physics , computer hardware , psychology , developmental psychology , statistics , philosophy , mathematics , theology , operating system , recurrent neural network
Neuro‐inspired computing using emerging memristors plays an increasingly significant role for the realization of artificial intelligence and thus has attracted widespread interest in the era of big data. Thanks to the maturity of technology and the superiority of device performance, phase change random access memory (PCRAM) is a promising candidate for both nonvolatile memories and neuro‐inspired computing. Recently many efforts have been carried out to achieve the biological behavior using PCRAM and to clarify the related working mechanism. In order to further improve device performances, it is helpful and urgent to summarize and discuss the PCRAM solution for neuro‐inspired computing. In this paper, fundamentals, principles, recent progresses, existing challenges, and mainstream solutions are reviewed, and a brief outlook is highlighted and introduced, with the expectation to expound future directions.