Premium
Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics
Author(s) -
Böckle Raphael,
Sistani Masiar,
Eysin Kilian,
Bartmann Maximilian G.,
Luong Minh Anh,
den Hertog Martien I.,
Lugstein Alois,
Weber Walter M.
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202001178
Subject(s) - nanoelectronics , materials science , transistor , footprint , electronics , nanotechnology , optoelectronics , differential (mechanical device) , heterojunction , block (permutation group theory) , nanowire , memory footprint , electronic engineering , computer science , electrical engineering , voltage , physics , engineering , paleontology , geometry , mathematics , biology , operating system , thermodynamics
In the quest to push the contemporary scientific boundaries in nanoelectronics, Ge is considered a key building block extending device performances, delivering enhanced functionalities. In this work, a quasi‐1D monocrystalline and monolithic Al–Ge–Al nanowire heterostructure are embedded into a novel field‐effect transistor architecture capable of combining Ge based electronics with an electrostatically tunable negative differential resistance (NDR) distinctly observable at room temperature. In this regard, a detailed study of the key metrics of NDR in Ge is presented. Most notably, a highly efficient and low‐footprint platform is demonstrated, paving the way for potential applications such as fast switching multi‐valued logic devices, static memory cells, or high‐frequency oscillators, all implemented in one fully complementary metal–oxide–semiconductor compatible Al‐Ge based device platform.