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Regulate the Electron Mobility and Threshold Voltage of P(NDI2OD‐T2)‐Based Organic Field‐Effect Transistors by the Compatibility Principle
Author(s) -
Yang HauRen,
Lai YuYing
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000939
Subject(s) - materials science , transistor , conjugated system , field effect transistor , compatibility (geochemistry) , electron mobility , intermolecular force , molecule , polymer , chemical physics , nanotechnology , voltage , optoelectronics , organic chemistry , electrical engineering , chemistry , composite material , engineering
Blending has been used extensively to meet the requirements for high‐mobility organic field‐effect transistors (OFETs), involving various combinations of (non‐)conjugated polymers and (non‐)conjugated molecules. Nonetheless, the collaborative effects of conjugated polymer and its structurally analogous molecule on charge‐transport properties have rarely been reported. In this work, P(NDI2OD‐T2) and N , N ′‐bisbutyl‐2,6‐bis([2,2′]bithiophenyl‐5‐yl)‐1,4,5,8‐naphthalene diimide (M), are synthesized and blended with each other. M is designed to resemble the monomeric unit of P(NDI2OD‐T2) on the basis of the premise that structural similarity would promote their compatibility in the blends. This compatibility preserves electronic coupling through intermolecular interaction and establishes charge‐transport pathways as well. Overall, the thin‐film morphology of the blends could be prudently regulated through controlling the blending fraction, resulting in raising electron mobility up to ≈0.3 cm 2 V −1 s −1 . More importantly, this approach reduces threshold voltage by 50%, originating from lowering the injection barrier. These findings are well rationalized and the promising capabilities of the compatibility principle in OFETs are strongly supported.