Premium
Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2
Author(s) -
Hong Sungjae,
Kim Kang Lib,
Cho Yongjae,
Cho Hyunmin,
Park Ji Hoon,
Park Cheolmin,
Im Seongil
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000906
Subject(s) - christian ministry , foundation (evidence) , library science , government (linguistics) , engineering physics , materials science , political science , engineering , computer science , law , philosophy , linguistics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom