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Homogeneous 3D Vertical Integration of Parylene‐C Based Organic Flexible Resistive Memory on Standard CMOS Platform
Author(s) -
Chen Qingyu,
Wang Zongwei,
Lin Min,
Qi Xin,
Yu Zhizhen,
Wu Lindong,
Bao Lin,
Ling Yaotian,
Qin Yabo,
Cai Yimao,
Huang Ru
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000864
Subject(s) - materials science , resistive random access memory , stacking , resistive touchscreen , nanotechnology , electrode , photolithography , parylene , optoelectronics , organic semiconductor , composite material , computer science , polymer , chemistry , physics , nuclear magnetic resonance , computer vision
3D integration of vertical resistive random access memory (VRRAM) with organic materials is promising for ultra‐high density flexible data storage. However, it is extremely challenging to heterogeneously fabricate an organic 3D VRRAM due to complicated issues such as chemical/thermal robustness, compatibility of organic/inorganic materials, and processes of stacking/patterning multi‐layer organic/metal films. Herein, an organic flexible 3D VRRAM based on parylene‐C is experimentally demonstrated on a standard complementary metal oxide semiconductor platform for the first time. The proposed 3D VRRAM can be homogenously fabricated based solely on parylene‐C (except the metal electrodes), significantly facilitating the 3D integration owing to chemical stability and compatibility with standard photolithography patterning. The flexible 3D organic memory arrays demonstrate great memory characteristics including retention time >10 5 s, endurance cycles >300, and resistance ON/OFF ratio >10. Further, a finite element analysis is established to model and investigate the scaling potential of the organic 3D VRRAM. The simulation results indicate the elevated temperature during programming could be catastrophic for ultra‐high density 3D VRRAM if the feature size approaches ≈100 nm or below, urging the containment of programming power to avoid thermal issues as well as to save energy consumption.