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Gate‐Controlled Field Emission Current from MoS 2 Nanosheets
Author(s) -
Pelella Aniello,
Grillo Alessandro,
Urban Francesca,
Giubileo Filippo,
Passacantando Maurizio,
Pollmann Erik,
Sleziona Stephan,
Schleberger Marika,
Di Bartolomeo Antonio
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000838
Subject(s) - materials science , field electron emission , molybdenum disulfide , optoelectronics , transistor , subthreshold slope , threshold voltage , substrate (aquarium) , field effect transistor , anode , monolayer , conductance , nanotechnology , analytical chemistry (journal) , electron , voltage , electrode , electrical engineering , condensed matter physics , oceanography , physics , chemistry , quantum mechanics , chromatography , geology , metallurgy , engineering
Monolayer molybdenum disulfide (MoS 2 ) nanosheets, obtained via chemical vapor deposition onto SiO 2 /Si substrates, are exploited to fabricate field‐effect transistors with n‐type conduction, high on/off ratio, steep subthreshold slope, and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS 2 nanosheets are performed in high vacuum using a tip‐shaped anode. It is demonstrated that the voltage applied to the Si substrate back‐gate modulates the field emission current. Such a finding, that it is attributed to gate‐bias lowering of the MoS 2 electron affinity, enables a new field‐effect transistor based on field emission.