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Thermomechanical Manipulation of Electric Transport in MoTe 2
Author(s) -
Kim Dohyun,
Lee JunHo,
Kang Kyungrok,
Won Dongyeun,
Kwon Min,
Cho Suyeon,
Son YoungWoo,
Yang Heejun
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000823
Subject(s) - materials science , condensed matter physics , magnetoresistance , semimetal , doping , density functional theory , fermi level , scanning tunneling microscope , monoclinic crystal system , topology (electrical circuits) , band gap , nanotechnology , optoelectronics , crystal structure , physics , crystallography , chemistry , electrical engineering , quantum mechanics , electron , magnetic field , engineering
Layered semimetals such as monoclinic MoTe 2 and WTe 2 demonstrate superconducting, topological insulating, and Weyl semimetallic states based on their unique electronic band topology. While doping concentration, lattice constants, and spin–orbit coupling can largely modulate the quantum states of the semimetals, a puzzling issue is that their functional carrier density and magnetoresistance for practical applications critically vary by temperature, which cannot be explained by the conventional phonon effect or a structural phase transition. Here, a native doping‐mediated thermomechanical manipulation of electric transport in semimetallic MoTe 2 is reported, where effective transport is controlled by temperature in an equivalent manner to electric gating. Combining X‐ray diffraction, scanning tunneling microscopy, transport measurements, and first‐principles calculations, a Fermi level shift and subsequent changes in electronic structures are revealed as the origins of the practical transport changes in MoTe 2 . Moreover, the initial doping state of the MoTe 2 , determined by the Te vacancy density in two different growth methods, reciprocally affects the thermomechanical lattice and band structure changes, which is promising for novel electronic applications such as magnetic sensors and memory devices with layered semimetals.