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Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices
Author(s) -
An Haoqun,
Ge Yang,
Li Mingjun,
Kim Tae Whan
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000593
Subject(s) - materials science , polyimide , optoelectronics , nanocomposite , quantum dot , indium tin oxide , molybdenum disulfide , indium , thermal stability , tin , molybdenum , annealing (glass) , nanotechnology , chemical engineering , thin film , layer (electronics) , composite material , engineering , metallurgy
In this paper two‐terminal memristive devices are presented with a structure of aluminum/polyimide‐molybdenumdisulfide quantum dot (QD) nanocomposite/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate)/indium tin oxide that exhibits the characteristics of write‐once‐read‐many times in the range of applied voltages from −6 to 3 V. The operating voltage of the device is as low as 1.4 V, and the ON/OFF ratio of 3 × 10 3 can be maintained for retention times larger than 3 × 10 4 s. No significant variation in the current–voltage ( I – V ) curves of the devices is observed under high annealing temperatures of 50, 100, and 200 °C, which is indicative of their excellent thermal stability. The conduction mechanisms of the devices in their high and low resistance states are described by fitting the I – V curves of the devices.