Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices

In this paper two‐terminal memristive devices are presented with a structure of aluminum/polyimide‐molybdenumdisulfide quantum dot (QD) nanocomposite/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate)/indium tin oxide that exhibits the characteristics of write‐once‐read‐many times in the range of applied voltages from −6 to 3 V. The operating voltage of the device is as low as 1.4 V, and the ON/OFF ratio of 3 × 10 3 can be maintained for retention times larger than 3 × 10 4 s. No significant variation in the current–voltage ( I – V ) curves of the devices is observed under high annealing temperatures of 50, 100, and 200 °C, which is indicative of their excellent thermal stability. The conduction mechanisms of the devices in their high and low resistance states are described by fitting the I – V curves of the devices.