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Low‐Pressure Mechanical Switching of Ferroelectric Domains in PbZr 0.48 Ti 0.52 O 3
Author(s) -
Vats Gaurav,
Schoenherr Peggy,
Kumar Ashok,
Seidel Jan
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000523
Subject(s) - materials science , ferroelectricity , heterojunction , nanoscopic scale , nanoelectronics , polarization (electrochemistry) , electric potential energy , substrate (aquarium) , epitaxy , optoelectronics , switching time , mechanical energy , commutation , condensed matter physics , nanotechnology , energy (signal processing) , voltage , electrical engineering , thermodynamics , power (physics) , statistics , layer (electronics) , chemistry , mathematics , oceanography , physics , engineering , geology , dielectric
Low‐energy switching of ferroelectrics is currently being investigated for energy‐efficient nanoelectronics. While conventional methods employ electrical fields to switch the polarization state, mechanical switching is investigated as an interesting alternative low‐energy switching concept, if low enough pressures could be achieved. Here, the thickness‐dependent mechanical and electrical switching behavior of ferroelectric PbZr 0.48 Ti 0.52 O 3 /YBa 2 Cu 3 O 7− δ (PZT/YBCO) epitaxial heterostructures grown on single crystalline LaAlO 3 ‐(001) pseudo‐cubic (LAO) substrate is reported. Mechanical switching is found under relatively low force (600 nN; estimated pressure ≈0.21 GPa) in atomic force microscopy‐based measurements. Mechanically switched domains can be erased by small electric fields and, interestingly, exhibit a surface potential change similar to electrically poled areas. The feasibility of switching these heterostructures with very low pressure makes them promising candidates for nanoscale electromechanical devices.