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Gate Stack Engineering in MoS 2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect
Author(s) -
Sheng Yaochen,
Chen Xinyu,
Liao Fuyou,
Wang Yin,
Ma Jingyi,
Deng Jianan,
Guo Zhongxun,
Bu Sitong,
Shen Hui,
Bai Fuyu,
Huang Daming,
Wang Jianlu,
Hu Weida,
Chen Lin,
Zhu Hao,
Sun Qingqing,
Zhou Peng,
Zhang David Wei,
Wan Jing,
Bao Wenzhong
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000395
Subject(s) - materials science , doping , field effect transistor , optoelectronics , transistor , stack (abstract data type) , dielectric , metal gate , hysteresis , gate dielectric , channel (broadcasting) , layer (electronics) , nanotechnology , electronic engineering , gate oxide , electrical engineering , computer science , voltage , condensed matter physics , engineering , physics , programming language
Abstract 2D transition metal dichalcogenides (TMDs) are promising semiconductive films for applications in future devices due to their prosperous and tunable band structures. However, most TMD‐based top gate transistors suffer from a significant doping effect in the channel due to the subsequent deposition high‐ k dielectric layer and metal gate, which limits their practical applications. In this work, the channel doping effect caused by various processing steps based on mechanical exfoliated MoS 2 sheets is systematically investigated. This work illustrates a clear correlation among these steps and provides a simple and efficient methodology to realize high‐performance enhancement mode MoS 2 field effect transistors, which can be extended to other 2D materials.