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Universal Memory Characteristics and Degradation Features of ZrO 2 ‐Based Bipolar Resistive Memory
Author(s) -
Hur JiHyun,
Lee Dongsoo
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000368
Subject(s) - resistive random access memory , materials science , reliability (semiconductor) , non volatile memory , dram , optoelectronics , degradation (telecommunications) , flash memory , nand gate , oxide , data retention , bilayer , dynamic random access memory , universal memory , memristor , computer science , power (physics) , electrical engineering , semiconductor memory , channel (broadcasting) , computer hardware , voltage , memory refresh , computer memory , membrane , computer network , engineering , biology , genetics , telecommunications , quantum mechanics , metallurgy , physics
A bilayer structured ZrO 2 ‐based bipolar resistance random access memory (ReRAM) is demonstrated with near‐universal memory performances that meets almost all the requirements of the representative volatile and nonvolatile memories such as dynamic random access memory (DRAM) and NAND flash memory. The near‐universal device features include the very high initial on/off ratio up to 10 6 , large switching endurance (10 12 switching cycles), long retention (≈10 years), and fast programming speed (≈50 ns) along with the relatively small power consumption (≈50 pJ bit −1 ). Such high levels of performance and reliability characteristics of ReRAM are accomplished by adopting the layer‐by‐layer oxidation method that makes the junction of two oxide layers, ZrO 2 /TaO x , as sharp as possible. However, despite all these excellent features of the ReRAM, there are unwanted clear degradations of off‐state resistance as time and switching cycles go on in reliability tests resulting in a gradual decrease of the on/off ratio. Through theoretical simulations based on the self‐consistent switching model of bilayer oxide ReRAM, the underlying fundamental principles of this phenomenon are suggested, the validity of which are confirmed by excellent agreement with experiment.