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Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire
Author(s) -
Shih YuChuan,
Lee Ling,
Liang KaiDe,
Manikandan Arumugam,
Liu WenWu,
Chen YuZe,
Chang MuTung,
Wang Zhiming M.,
Chueh YuLun
Publication year - 2021
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000252
Subject(s) - materials science , resistive random access memory , nanowire , fabrication , optoelectronics , layer (electronics) , resistive touchscreen , nanotechnology , neuromorphic engineering , non volatile memory , memristor , current (fluid) , nanoscopic scale , voltage , electrode , electronic engineering , electrical engineering , computer science , medicine , alternative medicine , pathology , machine learning , artificial neural network , engineering , chemistry
Resistive switching random access memory (ReRAM) has recently generated significant interest due to its potentials used in nanoscale logic, memory devices, and neuromorphic applications. From the device physics, a uniform dielectric layer is necessary to access as the main switching layer to perform stable resistive switching. This, however, makes the fabrication process more challenging. In this regard, a design of resistive switching memory by an in situ current‐induced oxidization process on a single crystal metallic nanowire (NW) is demonstrated where a single crystal Cu NW is found as the best material with stable switching behaviors after the in situ current‐induced oxidization process. With the in situ current‐induced oxidization process by high current density on the Cu NW, a reversible resistive switching up to 100 cycles with a large ON/OFF ratio of >10 3 and a low switching voltage of <0.5 V can be obtained. The initial current‐induced oxidation provides a core–shell (Cu 2 O/Cu) nanowire structure that contributed to the switching properties. The possible switching mechanisms and potential guidelines are systematically proposed. The current work opens up the opportunities to design the ReRAM device with full‐ metallic materials.