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Voltage Control of Skyrmion Bubbles for Topological Flexible Spintronic Devices
Author(s) -
Yang Qu,
Cheng Yuxin,
Li Yaojin,
Zhou Ziyao,
Liang Jinghua,
Zhao Xinger,
Hu Zhongqiang,
Peng Renci,
Yang Hongxin,
Liu Ming
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000246
Subject(s) - materials science , spintronics , voltage , ferromagnetism , electric field , skyrmion , gating , coupling (piping) , flexibility (engineering) , modulation (music) , topology (electrical circuits) , optoelectronics , condensed matter physics , electrical engineering , physics , engineering , statistics , mathematics , quantum mechanics , acoustics , metallurgy , physiology , biology
The electric field is an energy‐efficient tool that can be leveraged to control spin–orbit coupling. Although Dzyaloshinskii–Moriya interactions (DMI) in magnetic skyrmion systems can be regulated in flat state using an electric field, the control of their flexible behavior has remained elusive so far. Here, the double modulation of strain and voltage effects in a flexible ultrathin heavy metal (HM)/ferromagnetic (FM)/insulator (I) system, demonstrating that the interfacial DMI can be dual controlled via a mechanical stress and a circuit gating voltage at room temperature, is reported. An intensive tuning efficiency (26.7 mJ m −2 V −1 ) is obtained while maintaining an excellent mechanical strength, which is a result of Rashba‐DMI tuning at the FM/I interface. The result is promising in achieving novel flexible topological devices where low operation voltage and excellent flexibility are required.