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Unraveling Structure and Device Operation of Organic Permeable Base Transistors
Author(s) -
Darbandy Ghader,
Dollinger Felix,
Formánek Petr,
Hübner René,
Resch Stefan,
Roemer Christian,
Fischer Axel,
Leo Karl,
Kloes Alexander,
Kleemann Hans
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000230
Subject(s) - pinhole (optics) , materials science , current density , optoelectronics , transistor , fabrication , electrode , electronic circuit , base (topology) , current (fluid) , voltage , optics , electrical engineering , medicine , mathematical analysis , chemistry , physics , alternative medicine , mathematics , pathology , quantum mechanics , engineering
Organic permeable base transistors (OPBTs) are of great interest for flexible electronic circuits, as they offer very large on‐current density and a record‐high transition frequency. They rely on a vertical device architecture with current transport through native pinholes in a central base electrode. This study investigates the impact of pinhole density and pinhole diameter on the DC device performance in OPBTs based on experimental data and TCAD simulation results. A pinhole density of N Pin = 54 µm −2 and pinhole diameters around L Pin = 15 nm are found in the devices. Simulations show that a variation of pinhole diameter and density around these numbers has only a minor impact on the DC device characteristics. A variation of the pinhole diameter and density by up to 100% lead to a deviation of less than 4% in threshold voltage, on/off current ratio, and sub‐threshold slope. Hence, the fabrication of OPBTs with reliable device characteristics is possible regardless of statistical deviations in thin film formation.