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Fabrication and Operating Mechanism of Deep‐UV Transparent Semiconducting SrSnO 3 ‐Based Thin Film Transistor
Author(s) -
Wei Mian,
Gong Lizhikun,
Liang Doudou,
Cho Hai Jun,
Ohta Hiromichi
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000100
Subject(s) - materials science , optoelectronics , thin film transistor , fabrication , transistor , semiconductor , threshold voltage , electron mobility , band gap , voltage , nanotechnology , electrical engineering , layer (electronics) , medicine , alternative medicine , engineering , pathology
Thin film transistors (TFT) with deep‐UV transparency are a promising component for next‐generation optoelectronics such as biosensors. Among several deep‐UV transparent oxide semiconductors, SrSnO 3 is an excellent candidate material owing to its wide band gap (≈4.6 eV) and rather high carrier electron mobility. Herein, fabrication and operation mechanism of the SrSnO 3 ‐TFT is shown. A metal–insulator‐semiconductor structure is fabricated on a 28 nm‐thick SrSnO 3 film. The resultant TFT shows clear transistor characteristics; the on‐to‐off current ratio is ≈10 2 , the threshold voltage is ≈−18 V, and the field‐effect mobility is ≈14 cm 2 V −1 s −1 . The effective thickness of the electron channel gradually increases with gate voltage and saturates at ≈5 nm, which is evaluated by the thermopower modulation. The present results will be helpful for utilizing deep‐UV transparent TFTs for biosensing applications.