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Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000098
Subject(s) - materials science , resistive random access memory , grain boundary , hafnium , resistive touchscreen , optoelectronics , oxide , random access memory , random access , engineering physics , nanotechnology , metallurgy , electrical engineering , voltage , computer science , computer hardware , operating system , zirconium , microstructure , engineering